FDY1002PZ - Fairchild Semiconductor

FDY1002PZ MOSFET

„ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A „ Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A „ Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A „ Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A „ HBM ESD protection level = 1400 V (Note 3) „ RoHS Compliant This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Po.

Features

General Description „ Max rDS(on) = 0.5 Ω at VGS =
  –4.5 V, ID =
  –0.83 A „ Max rDS(on) = 0.7 Ω at VGS =
  –2.5 V, ID =
  –0.70 A „ Max rDS(on) = 1.2 Ω at VGS =
  –1.8 V, ID =
  –0.43 A „ Max rDS(on) = 1.8 Ω at VGS =
  –1.5 V, ID =
  –0.36 A „ HBM ESD protection level = 1400 V (Note 3) „ RoHS Compliant This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on)@VGS =
  –1.5 V. Application „ Li-Ion Battery Pack 6 5 4 1 2 3 SC89-6 S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS .