FDY4001CZ - Fairchild Semiconductor

FDY4001CZ Complementary N & P-Channel PowerTrench MOSFET

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications „ Level shifting „ Power Supply Converter Circuits „ Load/Power Switching Cell Phones, Pagers „ Max rDS(on) = 8Ω at VGS = -4.5V, ID = -150mA „ Max rDS(.

Features

Q1: N-Channel „ Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA „ Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA „ Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Channel tm General Description This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications „ Level shifting „ Power Supply Converter Circuits „ Load/Power Switching Cell Phones, Pagers „ Max rDS(on) = 8Ω at VGS = -4.5V, ID = -150mA „ Max rDS(on) = 12Ω at VGS = -2.5V, ID = -125mA „ Max rDS(on) .