FDY101PZ - Fairchild Semiconductor

FDY101PZ Single P-Channel MOSFET

Features This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. IGN Applications ES • Li-Ion Battery Pack • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V RDS(ON) = 12 Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant UER NDEW D 1S O i G 1 INED .

Features

This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS =
  – 2.5v. IGN Applications ES
• Li-Ion Battery Pack
•
  – 150 mA,
  – 20 V RDS(ON) = 8 Ω @ VGS =
  – 4.5 V RDS(ON) = 12 Ω @ VGS =
  – 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant UER NDEW D 1S O i G 1 INED F nsemTION G NOMTMETNYDOUINRFoORMA D S2 COT RECNTAC FOR Absolute Maximum Ratings TA=25oC unless otherwise noted NO CO IVE Symbol Parameter ISIS E T VDSS S TA VGSS D ICE EA N ID DEV PL RESE PD Drain-Source Voltage Gate-Source Voltage Drain Curr.