FDY302NZ - Fairchild Semiconductor

FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET

Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. IGN Applications ES • Li-Ion Battery Pack • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 500 mΩ @ VGS = 2.5 V • ESD protection diode (note 3) • RoHS Compliant UOER NDEiW D 1S F m N G 1 INDED .

Features

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. IGN Applications ES
• Li-Ion Battery Pack
• 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 500 mΩ @ VGS = 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant UOER NDEiW D 1S F m N G 1 INDED onse ATIO G NOMTMETNYOUINRFORM S 2 OREC TAC OR D COT ON E F Absolute Maximum Ratings TA=25oC unless otherwise noted ISIS N E C TIV Symbol Parameter Ratings E AS NTA VDS D IC LE E VGS V P ES ID IS DE EPR PD TH R TJ, TSTG Drain-Source Voltage Ga.