FDY3000NZ - Fairchild Semiconductor

FDY3000NZ Dual N-Channel Specified PowerTrench MOSFET

This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features • 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 1 2 3 Absolute Maximum Ratings Symbo.

Features

• 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant Applications
• Li-Ion Battery Pack 6 5 4 1 2 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o S1 G1 D2 1 6 D1 2 3 5 4 G2 S2 Parameter Drain-Source Voltage Gate-Source Voltage
  – Continuous
  – Pulsed Power Dissipation (Steady State) Drain Current (Note 1a) Ratings 20 ± 12 600 1000 625 446
  –55 to +150 Units V V mA mW °C (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA .