This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. Features • – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V RDS(ON) = 1.6 Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G.
•
– 350 mA,
– 20 V RDS(ON) = 1.2 Ω @ VGS =
– 4.5 V RDS(ON) = 1.6 Ω @ VGS =
– 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant
Applications
• Li-Ion Battery Pack
6
5
4
S1 G1
1 2 3
6 5 4
D1 G2 S2
1
2
D2
3
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
(Note 1a) 1a)
Ratings
– 20 ±8
– 350
– 1000 625 446
–55 to +150
Unit s
V V mA mW °C
Power Dissipation (Steady State)
(Note 1a) 1a) (Note 1b) 1
Operating and Storage Junction Temperature Range
Therm.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDY2001PZ |
Fairchild Semiconductor |
Dual P-Channel Specified PowerTrench MOSFET | |
2 | FDY1002PZ |
Fairchild Semiconductor |
MOSFET | |
3 | FDY1002PZ |
ON Semiconductor |
Dual P-Channel MOSFET | |
4 | FDY100PZ |
Fairchild Semiconductor |
Single P-Channel Specified PowerTrench MOSFET | |
5 | FDY101PZ |
Fairchild Semiconductor |
Single P-Channel MOSFET | |
6 | FDY102PZ |
Fairchild Semiconductor |
MOSFET | |
7 | FDY3000NZ |
Fairchild Semiconductor |
Dual N-Channel Specified PowerTrench MOSFET | |
8 | FDY3001NZ |
Fairchild Semiconductor |
Dual N-Channel Specified PowerTrench MOSFET | |
9 | FDY300NZ |
Fairchild Semiconductor |
Single N-Channel Specified PowerTrench MOSFET | |
10 | FDY301NZ |
Fairchild Semiconductor |
Single N-Channel MOSFET | |
11 | FDY302NZ |
Fairchild Semiconductor |
Single N-Channel 2.5V Specified PowerTrench MOSFET | |
12 | FDY4000CZ |
Fairchild Semiconductor |
Complementary N & P-Channel PowerTrench MOSFET |