FDY301NZ - Fairchild Semiconductor

FDY301NZ Single N-Channel MOSFET

Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. IGN Applications ES • Li-Ion Battery Pack • 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V • ESD protection diode (note 3) • RoHS Compliant UFOER NmDEiW DN 1S IND se IO G 1 T NDE.

Features

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. IGN Applications ES
• Li-Ion Battery Pack
• 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant UFOER NmDEiW DN 1S IND se IO G 1 T NDE R on MAT G NOMMET YOUINFOR S 2 COT RECNTAC FOR D NO CO IVE Absolute Maximum Ratings TA=25oC unless otherwise noted ISIS SE AT Symbol Parameter E A NT VDSS D IC LE E VGSS V P ES ID IS DE EPR PD Drain-Source Voltage Gate-Source Voltage Drain Cur.