FDY2001PZ - Fairchild Semiconductor

FDY2001PZ Dual P-Channel Specified PowerTrench MOSFET

This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. Features • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V RDS(ON) = 12Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2.

Features

•
  – 150 mA,
  – 20 V RDS(ON) = 8 Ω @ VGS =
  – 4.5 V RDS(ON) = 12Ω @ VGS =
  – 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant Applications
• Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2 1 2 D2 3 TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Power Dissipation (Steady State) (Note 1a) 1a) Ratings
  – 20 ±8
  – 150
  – 1000 625 446
  –55 to +150 Units V V mA mW °C (Note 1a) 1a) (Note 1b) 1 Operating and Storage Junction Temperature Range Thermal Cha.