This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA Max rDS(on) = 1.6Ω at VGS = -2.5V, ID = -300mA Max rDS(on) = 2.7Ω at VGS = -1.8V, ID = -150mA E.
Q1: N-Channel Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q2: P-Channel Level shifting Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers tm General Description This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA Max rDS(on) = 1.6Ω at VGS = -2.5V, ID = -300mA .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDY4001CZ |
Fairchild Semiconductor |
Complementary N & P-Channel PowerTrench MOSFET | |
2 | FDY1002PZ |
Fairchild Semiconductor |
MOSFET | |
3 | FDY1002PZ |
ON Semiconductor |
Dual P-Channel MOSFET | |
4 | FDY100PZ |
Fairchild Semiconductor |
Single P-Channel Specified PowerTrench MOSFET | |
5 | FDY101PZ |
Fairchild Semiconductor |
Single P-Channel MOSFET | |
6 | FDY102PZ |
Fairchild Semiconductor |
MOSFET | |
7 | FDY2000PZ |
Fairchild Semiconductor |
Dual P-Channel Specified PowerTrenchR MOSFET | |
8 | FDY2001PZ |
Fairchild Semiconductor |
Dual P-Channel Specified PowerTrench MOSFET | |
9 | FDY3000NZ |
Fairchild Semiconductor |
Dual N-Channel Specified PowerTrench MOSFET | |
10 | FDY3001NZ |
Fairchild Semiconductor |
Dual N-Channel Specified PowerTrench MOSFET | |
11 | FDY300NZ |
Fairchild Semiconductor |
Single N-Channel Specified PowerTrench MOSFET | |
12 | FDY301NZ |
Fairchild Semiconductor |
Single N-Channel MOSFET |