FDY100PZ - Fairchild Semiconductor

FDY100PZ Single P-Channel Specified PowerTrench MOSFET

This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. Features • – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V RDS(ON) = 1.6 Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 1 S G D Absolute Maximum Ratings.

Features

•
  – 350 mA,
  – 20 V RDS(ON) = 1.2 Ω @ VGS =
  – 4.5 V RDS(ON) = 1.6 Ω @ VGS =
  – 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant Applications
• Li-Ion Battery Pack 1 S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25oC unless otherwise noted G 1 3 D S 2 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed (Note 1a) 1a) Ratings
  – 20 ±8
  – 350
  – 1000 625 446
  –55 to +150 Unit s V V mA mW °C Power Dissipation (Steady State) (Note 1a) 1a) (Note 1b) 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJ.