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FDY1002PZ |
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| Part Number | FDY1002PZ |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID =... |
| Features |
General Description
Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A HBM ESD protection level = 1400 V (Note 3) RoHS Compliant This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on)@VGS = –1.5 V. Application Li-Ion Battery Pack 6 5 4 1 2 3 SC89-6 S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ... |
| Document |
 FDY1002PZ Data Sheet
PDF 227.48KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDY1002PZ |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 2 | FDY100PZ |
Fairchild Semiconductor |
Single P-Channel Specified PowerTrench MOSFET |
|
| 3 | FDY101PZ |
Fairchild Semiconductor |
Single P-Channel MOSFET |
|
| 4 | FDY102PZ |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDY2000PZ |
Fairchild Semiconductor |
Dual P-Channel Specified PowerTrenchR MOSFET |
|