FDY102PZ - Fairchild Semiconductor

FDY102PZ MOSFET

„ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A „ Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A „ Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A „ Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A „ HBM ESD protection level = 1400 V (Note 3) „ RoHS Compliant This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced .

Features

General Description „ Max rDS(on) = 0.5 Ω at VGS =
  –4.5 V, ID =
  –0.83 A „ Max rDS(on) = 0.7 Ω at VGS =
  –2.5 V, ID =
  –0.70 A „ Max rDS(on) = 1.2 Ω at VGS =
  –1.8 V, ID =
  –0.43 A „ Max rDS(on) = 1.8 Ω at VGS =
  –1.5 V, ID =
  –0.36 A „ HBM ESD protection level = 1400 V (Note 3) „ RoHS Compliant This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on)@VGS =
  –1.5 V. Application „ Li-Ion Battery Pack S G D SC89-3 G1 S2 3D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter D.