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FDY1002PZ |
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| Part Number | FDY1002PZ |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These P−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for ... |
| Features |
• Max rDS(on) = 0.5 W at VGS = –4.5 V, ID = –0.83 A • Max rDS(on) = 0.7 W at VGS = –2.5 V, ID = –0.70 A • Max rDS(on) = 1.2 W at VGS = –1.8 V, ID = –0.43 A • Max rDS(on) = 1.8 W at VGS = –1.5 V, ID = –0.36 A • HBM ESD Protection Level = 1400 V (Note 1) • This Device is Pb−Free and is RoHS Compliant Application • Li−Ion Battery Pack NOTE: 1. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. DATA SHEET www.onsemi.com VDS −20 V rDS(on) MAX 0.5 W @ −4.5 V 0.7 W @ −2.5 V 1.2 W @ −1.8 V 1.8 W @ −1.5 V ID MAX −0.83 A 6 5... |
| Document |
 FDY1002PZ Data Sheet
PDF 251.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDY1002PZ |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDY100PZ |
Fairchild Semiconductor |
Single P-Channel Specified PowerTrench MOSFET |
|
| 3 | FDY101PZ |
Fairchild Semiconductor |
Single P-Channel MOSFET |
|
| 4 | FDY102PZ |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDY2000PZ |
Fairchild Semiconductor |
Dual P-Channel Specified PowerTrenchR MOSFET |
|