No. | Partie # | Fabricant | Description | Fiche Technique |
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Filtronic Compound Semiconductors |
PACKAGED 2W POWER PHEMT ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency LP3000P100 • DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) |
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Filtronic Compound Semiconductors |
2-WATT POWER PHEMT ♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X) • DESCRIPTION AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseud |
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Filtronic Compound Semiconductors |
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Filtronic Compound Semiconductors |
PACKAGED MEDIUM POWER PHEMT ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high elec |
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Filtronic Compound Semiconductors |
PACKAGED 0.5 WATT POWER PHEMT ♦ ♦ ♦ ♦ ♦ • 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenid |
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Filtronic Compound Semiconductors |
MEDIUM POWER PHEMT WITH SOURCE VIAS ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD • DESCRIPTION AND AP |
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Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz • DESCRIPTION AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The |
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Filtronic Compound Semiconductors |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT ♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency FP1510SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • DESCRIPTION AND APPLICATIO |
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Filtronic Compound Semiconductors |
ULTRA LOW NOISE PHEMT ♦ 0.6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consumption ♦ Excellent Phase Noise DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7512 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils ( |
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Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT ♦ 1.0 dB Noise Figure at 1.8 GHz ♦ 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz ♦ 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz ♦ 31 dBm IP3 at 1.8 GHz ♦ 60% Power-Added-Efficiency LPD200MX • DESCRIPTION AND APPLICATIONS The LPD200 is an |
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Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz LPD200P70 • DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / In |
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Filtronic Compound Semiconductors |
1W POWER PHEMT ♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression at 3.3V ♦ 45dBm Output IP3 at 18GHz ♦ 50% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X) |
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Filtronic Compound Semiconductors |
MEDIUM POWER PHEMT WITH SOURCE VIAS ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD • DESCRIPTION AND AP |
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Filtronic Compound Semiconductors |
38GHz Medium Power Amplifier ignal Gain Flatness Input Return Loss Output Return Loss Reverse Isolation 1-dB Gain Com pression Power Saturated Output Power Test Conditions @ .75 IDSS @ IDSS Min. 37 14 300 Max. 40 450 ±2 @ .75 IDSS 17 Units GHz dB mA dB dB dB dB dBm dBm Ab |
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Filtronic Compound Semiconductors |
2W Power PHEMT ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compression at 3.3V ♦ 45% Power-Added Efficiency DRAIN BOND PAD (4X) SOURCE BOND PAD (2x) GATE BOND PAD (4X) LP3000 • DESCRIPTION AND |
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Filtronic Compound Semiconductors |
MEDIUM POWER PHEMT ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) LP6836 GATE BOND PAD • DESCRIPTION AND APPLICATIONS DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THIC |
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Filtronic Compound Semiconductors |
0.5W POWER PHEMT ♦ 27 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) LP6872 GATE BOND PAD (2X) • DESCRIPTION AND APPLICATIONS DIE SIZE: 14.6X19.7 mils (370x500 µm |
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Filtronic Compound Semiconductors |
0.5 W POWER PHEMT ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compression at 3.3V ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) GATE BOND PAD LP750 • DESCRIPTION AND APPLICATIONS |
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Filtronic Compound Semiconductors |
PACKAGED ULTRA LOW NOISE PHEMT ♦ 0.7 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ 0.4 dB Noise Figure at 2 GHz ♦ 18 dB Associated Gain at 2 GHz ♦ Low DC Power Consumption: 30mW LP7512P70 • DESCRIPTION AND APPLICATIONS The LP7512P70 is a packaged Aluminum Galliu |
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Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz LP7612P70 • DESCRIPTION AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / In |
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