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LPD200MX |
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| Part Number | LPD200MX |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.... |
| Features |
♦ 1.0 dB Noise Figure at 1.8 GHz ♦ 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz ♦ 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz ♦ 31 dBm IP3 at 1.8 GHz ♦ 60% Power-Added-Efficiency
LPD200MX
• DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have... |
| Document |
 LPD200MX Data Sheet
PDF 68.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LPD200 |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT |
|
| 2 | LPD200P70 |
Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT |
|
| 3 | LPD200SOT343 |
Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT |
|
| 4 | LPD25 |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 5 | LPD25-10B |
ALPHA |
Low Pressure Drop Heat Sink |
|