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LP6836 |
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| Part Number | LP6836 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm) The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (Al... |
| Features |
♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency
DRAIN BOND PAD SOURCE BOND PAD (2x)
LP6836
GATE BOND PAD
• DESCRIPTION AND APPLICATIONS DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm) The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 360 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gat... |
| Document |
 LP6836 Data Sheet
PDF 35.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LP6836P100 |
Filtronic Compound Semiconductors |
Packaged 0.25W Power PHEMT |
|
| 2 | LP6836P70 |
Filtronic Compound Semiconductors |
PACKAGED MEDIUM POWER PHEMT |
|
| 3 | LP6836SOT343 |
Filtronic Compound Semiconductors |
PACKAGED MEDIUM POWER PHEMT |
|
| 4 | LP6872 |
Filtronic Compound Semiconductors |
0.5W POWER PHEMT |
|
| 5 | LP6872P100 |
Filtronic Compound Semiconductors |
Packaged 0.5W Power PHEMT |
|