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FP100 |
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| Part Number | FP100 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gal... |
| Features |
♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz
• DESCRIPTION AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation. T... |
| Document |
 FP100 Data Sheet
PDF 32.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FP1000 |
ETC |
(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES |
|
| 2 | FP1000A |
ETC |
(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES |
|
| 3 | FP1005R |
EATON |
High current power inductors |
|
| 4 | FP1006 |
EATON |
High current power inductors |
|
| 5 | FP1007 |
EATON |
High current power inductors |
|