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LP750 |
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| Part Number | LP750 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.2... |
| Features |
♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compression at 3.3V ♦ 55% Power-Added Efficiency
DRAIN BOND PAD SOURCE BOND PAD (2x) GATE BOND PAD
LP750
• DESCRIPTION AND APPLICATIONS The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 750 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processi... |
| Document |
 LP750 Data Sheet
PDF 34.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LP750P100 |
Filtronic Compound Semiconductors |
PACKAGED 0.5 WATT POWER PHEMT |
|
| 2 | LP750SOT89 |
Filtronic Compound Semiconductors |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT |
|
| 3 | LP7510 |
ETC |
PC Power Supply Supervisors |
|
| 4 | LP75103122F |
EEMB |
Lithium Iron Phosphate Battery |
|
| 5 | LP7512 |
Filtronic Compound Semiconductors |
ULTRA LOW NOISE PHEMT |
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