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FP4050 |
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| Part Number | FP4050 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Bea... |
| Features |
♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Power Gain at 2 GHz
DRAIN BOND PAD SOURCE BOND PAD (2X)
• DESCRIPTION AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation. Typical applications include commercial and military high-performance power amplifiers... |
| Document |
 FP4050 Data Sheet
PDF 39.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FP400F40ADFF1 |
JILIN SINO |
FAST RECOVERY DIODE MODULE |
|
| 2 | FP401 |
Sanyo Semicon Device |
Very High-Speed Switching Applications |
|
| 3 | FP402 |
Sanyo Semicon Device |
Very High-Speed Switching Applicaitons |
|
| 4 | FP40R12KE3 |
Eupec |
IGBT |
|
| 5 | FP40R12KE3 |
Infineon |
IGBT |
|