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LP1500 |
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| Part Number | LP1500 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS DIE SIZE: 16.5X16.1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaA... |
| Features |
♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression at 3.3V ♦ 45dBm Output IP3 at 18GHz ♦ 50% Power-Added Efficiency
DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X)
LP1500
• DESCRIPTION AND APPLICATIONS DIE SIZE: 16.5X16.1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 1500 µ m ... |
| Document |
 LP1500 Data Sheet
PDF 40.32KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LP1500P100 |
Filtronic Compound Semiconductors |
PACKAGED 1W POWER PHEMT |
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| 2 | LP1500SOT223 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
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| 3 | LP1500SOT2231 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
|
| 4 | LP1500SOT2232 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
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| 5 | LP1500SOT2233 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
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