LP750P100 |
Part Number | LP750P100 |
Manufacturer | Filtronic Compound Semiconductors |
Description | AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direc... |
Features |
♦ ♦ ♦ ♦ ♦ • 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power/low-noise applications. The... |
Document |
LP750P100 Data Sheet
PDF 49.27KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | LP750 |
Filtronic Compound Semiconductors |
0.5 W POWER PHEMT | |
2 | LP750SOT89 |
Filtronic Compound Semiconductors |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT | |
3 | LP7510 |
ETC |
PC Power Supply Supervisors | |
4 | LP75103122F |
EEMB |
Lithium Iron Phosphate Battery | |
5 | LP7512 |
Filtronic Compound Semiconductors |
ULTRA LOW NOISE PHEMT |