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FP1510SOT89 |
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| Part Number | FP1510SOT89 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.10 µm x 1500... |
| Features |
♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency
FP1510SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
• DESCRIPTION AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. Th... |
| Document |
 FP1510SOT89 Data Sheet
PDF 139.21KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FP150F |
VMI |
(FP125F - FP175F) Rectifier Stacks |
|
| 2 | FP150R07N3E4 |
Infineon |
IGBT |
|
| 3 | FP150R07N3E4_B11 |
Infineon |
IGBT |
|
| 4 | FP150R12KT4 |
Infineon |
IGBT |
|
| 5 | FP150R12KT4P |
Infineon |
IGBT |
|