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LPA6836V |
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| Part Number | LPA6836V |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm) The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (... |
| Features |
♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization
DRAIN BOND PAD
LPA6836V
MEDIUM POWER PHEMT WITH SOURCE VIAS
GATE BOND PAD
• DESCRIPTION AND APPLICATIONS DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm) The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 360 µm Schottky barrier gate. The ... |
| Document |
 LPA6836V Data Sheet
PDF 70.02KB |
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