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LP7512 |
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| Part Number | LP7512 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.... |
| Features |
♦ 0.6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consumption ♦ Excellent Phase Noise
DRAIN BOND PAD (2X) GATE BOND PAD (2X)
LP7512
SOURCE BOND PAD (2x)
DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm)
• DESCRIPTION AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimize... |
| Document |
 LP7512 Data Sheet
PDF 36.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LP7510 |
ETC |
PC Power Supply Supervisors |
|
| 2 | LP75103122F |
EEMB |
Lithium Iron Phosphate Battery |
|
| 3 | LP7512P70 |
Filtronic Compound Semiconductors |
PACKAGED ULTRA LOW NOISE PHEMT |
|
| 4 | LP750 |
Filtronic Compound Semiconductors |
0.5 W POWER PHEMT |
|
| 5 | LP750P100 |
Filtronic Compound Semiconductors |
PACKAGED 0.5 WATT POWER PHEMT |
|