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LP3000P100 |
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| Part Number | LP3000P100 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 3000... |
| Features |
♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency
LP3000P100
• DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 3000 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The... |
| Document |
 LP3000P100 Data Sheet
PDF 47.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LP3000 |
Filtronic Compound Semiconductors |
2W Power PHEMT |
|
| 2 | LP3000SOT89 |
Filtronic Compound Semiconductors |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT |
|
| 3 | LP30-1600 |
Superworld Electronics |
POWER TRANSFORMER |
|
| 4 | LP30-1600F |
Superworld Electronics |
POWER TRANSFORMER |
|
| 5 | LP30-200 |
Superworld Electronics |
POWER TRANSFORMER |
|