SUB65P06-20 - Vishay Siliconix

SUB65P06-20 P-Channel MOSFET

www.DataSheet4U.com SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) –60 rDS(on) (W) 0.020 ID (A) –65a TO-220AB S TO-263 G DRAIN connected to TAB G D S Top View SUP65P06-20 G D S D Top View SUB65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source .

Features

odel information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70289 S-05111—Rev. C, 10-Dec-01 www.vishay.com Free Air (TO-220AB) Symbol RthJA RthJA RthJC Limit 40 62.5 0.6 Unit _C/W 2-1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB65P06-20 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID =
  –250 mA VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "20 V VDS =
  –60 V, VGS = 0 V Zero Gate Voltage Drain Cur.