Semiconductor SUB610 Schottky Barrier Diode Features • • • • Small SMD package & 3chip array Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability Ordering Information Type No. SUB610 Marking 61B Package Code SOT-363 Outline Dimensions unit : mm 1.95~2.25 0.65 Typ. 1.15~1.35 0.30 Max. www.DataSheet4U.com 1 2 3 0.65 Typ. 6 5.
•
•
•
• Small SMD package & 3chip array Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability
Ordering Information
Type No. SUB610 Marking 61B Package Code SOT-363
Outline Dimensions
unit : mm
1.95~2.25 0.65 Typ. 1.15~1.35
0.30 Max.
www.DataSheet4U.com
1 2 3
0.65 Typ.
6 5 4
1.90~2.10 0.19 Max.
1
2
3
0.85~0.95
4
5
6
0.10 Max.
0.25 Min.
• PIN Connections 1, 2, 3: Cathode 4, 5, 6: Anode
KSD-D5S004-000
1
SUB610
Absolute Maximum Ratings
Characteristic
Reverse voltage Forward current Peak forward surge current (Non-repetitive 60Hz sine wave) Power dissip.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUB60N06-08 |
TEMIC |
N-Channel MOSFET | |
2 | SUB60N06-14 |
TEMIC |
N-Channel Transistor | |
3 | SUB60N06-18 |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SUB60P06-20 |
TEMIC |
P-Channel Transistor | |
5 | SUB65P04-15 |
Vishay Siliconix |
P-Channel MOSFET | |
6 | SUB65P06-20 |
Vishay Siliconix |
P-Channel MOSFET | |
7 | SUB65P06-20 |
TEMIC Semiconductors |
P-Channel Enhancement-Mode Transistors | |
8 | SUB15P01-52 |
Vishay Siliconix |
P-Channel MOSFET | |
9 | SUB40N06-25L |
Vishay Siliconix |
N-Channel MOSFET | |
10 | SUB45N03-13L |
Vishay Siliconix |
N-Channel MOSFET | |
11 | SUB50N06-18 |
TEMIC |
N-Channel MOSFET | |
12 | SUB70N03-09BP |
Vishay |
N-Channel MOSFET PWM Optimized |