SUB60N06-14 - TEMIC

SUB60N06-14 N-Channel Transistor

TEMIC Siliconix SUP/SUB60N06-14 N-Channel Enhancement-Mode 'fransistor 175°C Maximum Junction Temperature Product Summary V(BR)OSS (V) 60 rOS(on) (Q) 0.014 TO-220AB o 10 (A) 60a TO-263 DRAIN connected to TAB GDS ThpView SUP60N06-14 G0 S ThpView SUB60N06-14 o Go-l S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Par.

Features

Advance Information Limit 40 80 1.5 Unit 'c/w 6-161 TEMIC SUP/SUB60N06-14 = Specifications (TJ 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On
·State Resistanceb Forward 1i"ansconductanceb V(BR)DSS VGS(th) IGSS Inss In(on) rns(on) grs VGS = ov, In = 2501lA Vns = VGs, Ins = 1 rnA Vns = Ov, VGS = ±20V Vns = 48 V, VGS = OV Vns = 48 V, VGS = 0 V, Tl = 125'C Vns - 48 V, VGS - Ov, Tl- 175'C Vns-5V,VGS- 10V VGS = 10 V, In =30A .