SUB15P01-52 - Vishay Siliconix

SUB15P01-52 P-Channel MOSFET

www.DataSheet4U.com SUP/SUB15P01-52 Vishay Siliconix P-Channel 8-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.052 @ VGS = –4.5 V –8 0.070 @ VGS = –2.5 V 0.105 @ VGS = –1.8 V ID (A) –15 –10 –10.5 TO-220AB S TO-263 G DRAIN connected to TAB G G D S Top View SUP15P01-52 SUB15P01-52 P-Channel MOSFET D S Top View D www.DataSheet4U.com Param.

Features

are PCB (FR-4 material). d. See SOA curve for voltage derating. Document Number: 71085 S-20966—Rev. C, 01-Jul-02 www.vishay.com PCB Mount (TO-263)c Symbol RthJA RthJC RthJL Typical 58 5 16 Maximum 70 6 20 Unit _C/W 1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB15P01-52 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID =
  –250 mA VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "8 V VDS =
  –6.4 V, VGS = 0 V Zero Gate Voltage Drain Current I.