SUB60P06-20 - TEMIC

SUB60P06-20 P-Channel Transistor

TEMIC Siliconix SUP/SUB60P06-20 P-Channel Enhancement-Mode Thansistor 175°C Maximum Junction Temperature Product Summary V(BR)DSS (V) rDS(on) (Q) ID (A) -60 0.020 -60a TO-220AB S o TO-263 DRAIN connected to TAB GDS ThpView SUP60P06-20 GDS ThpView SUB60P06-20 D P-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Par.

Features

). (05/18/94) Advance Information Limit 40 80 1.0 Unit .c{w 6-163 TEMIC SUP/SUB60P06-20 = Specifications (TJ 25°C Unless Otherwise Noted) Static Parameter Symbol Test Condition Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Snurce On-State Resistanceb Forward 'nansconductanceb V(BR)DSS VGS(tb) IGSS lOSS 10(0') tnS(nn) gr, VGS = 0 V, 10 = -250!1A Vos - VGs. 10 = -250!1A VOS= OV,VGS= ±20V VOS = -48 V, VGS - OV Vos = -48V,VGS = OV,Tr = 125'C Vos = -48 V,VGS = OV,Tr = 175'C Vos = -5V,VGS = -10 V VG.