SUB45N03-13L - Vishay Siliconix

SUB45N03-13L N-Channel MOSFET

www.DataSheet4U.com SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.013 @ VGS = 10 V 0.02 @ VGS = 4.5 V ID (A) 45a 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L www.DataSheet4U.com N-Channel MOSFET ABSOLUTE MAXIMUM RATIN.

Features

PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.013 @ VGS = 10 V 0.02 @ VGS = 4.5 V ID (A) 45a 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L www.DataSheet4U.com N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 45a 34a 100 45 100 88c 3.75 - 5.