SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175 °C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 60 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V TO-220AB ID (A) 40 40 FEATURES • TrenchFET® Power MOSFETs • Maximum Junction Temperature: 175 °C Rated TO-263 D Available RoHS* COMPLIANT DRAIN connected to TAB GD S Top View SUP40N.
• TrenchFET® Power MOSFETs
• Maximum Junction Temperature: 175 °C Rated
TO-263
D
Available
RoHS
*
COMPLIANT
DRAIN connected to TAB
GD S Top View SUP40N06-25L
G DS Top View
SUB40N06-25L
Ordering Information: TO-220AB: TO-263:
SUP40N06-25L SUP40N06-25L-E3 (Lead (Pb)-free) SUB40N06-25L SUB40N06-25L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Ene.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUB45N03-13L |
Vishay Siliconix |
N-Channel MOSFET | |
2 | SUB15P01-52 |
Vishay Siliconix |
P-Channel MOSFET | |
3 | SUB50N06-18 |
TEMIC |
N-Channel MOSFET | |
4 | SUB60N06-08 |
TEMIC |
N-Channel MOSFET | |
5 | SUB60N06-14 |
TEMIC |
N-Channel Transistor | |
6 | SUB60N06-18 |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SUB60P06-20 |
TEMIC |
P-Channel Transistor | |
8 | SUB610 |
AUK |
Schottky Barrier Diode | |
9 | SUB65P04-15 |
Vishay Siliconix |
P-Channel MOSFET | |
10 | SUB65P06-20 |
Vishay Siliconix |
P-Channel MOSFET | |
11 | SUB65P06-20 |
TEMIC Semiconductors |
P-Channel Enhancement-Mode Transistors | |
12 | SUB70N03-09BP |
Vishay |
N-Channel MOSFET PWM Optimized |