TEMIC Siliconix N-Channel Enhancement-Mode 1ransistor 175°C Maximum Junction Temperature SUB60N06-08 Product Summary V(BR)nSS (V) 60 rnS(on) (0) 0.008 In (A) 60a D TO-263 G DS ThpView DRAIN connected to TAB S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Gate-Source Voltage Parameter Continuous Drain Current (TJ = .
arameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS VGS = Ov, In = 2S0!1A 60 Gate Threshold Voltage Gate-Body Leakage VGS(th) Vns = VGS, In = 2S0!1A 2.0 IGSS Vns = Ov, VGS = ±20V Zero Gate Voltage Drain Current Vns = 48V,VGS = OV Inss Vns = 48 ~ VGS = OV,TJ = l2SoC Vns = 48 V, VGS = Ov, TJ = 175°C On-State Drain Currentb In(on) Vns = SV,VGS = 10V 60 Drain-Source On-State Resistanceb fDS(on) VGS = 10 V, In = 30A VGS = 10 V, In = 30 A, TJ = l2SoC VGS = 10 V, In = 30 A, TJ = 175°C Forward 'fransconductanceb gr. Vns = 15 V, In = 30 A 30 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUB60N06-14 |
TEMIC |
N-Channel Transistor | |
2 | SUB60N06-18 |
Vishay Siliconix |
N-Channel MOSFET | |
3 | SUB60P06-20 |
TEMIC |
P-Channel Transistor | |
4 | SUB610 |
AUK |
Schottky Barrier Diode | |
5 | SUB65P04-15 |
Vishay Siliconix |
P-Channel MOSFET | |
6 | SUB65P06-20 |
Vishay Siliconix |
P-Channel MOSFET | |
7 | SUB65P06-20 |
TEMIC Semiconductors |
P-Channel Enhancement-Mode Transistors | |
8 | SUB15P01-52 |
Vishay Siliconix |
P-Channel MOSFET | |
9 | SUB40N06-25L |
Vishay Siliconix |
N-Channel MOSFET | |
10 | SUB45N03-13L |
Vishay Siliconix |
N-Channel MOSFET | |
11 | SUB50N06-18 |
TEMIC |
N-Channel MOSFET | |
12 | SUB70N03-09BP |
Vishay |
N-Channel MOSFET PWM Optimized |