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SUB65P06-20 |
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| Part Number | SUB65P06-20 |
| Manufacturer | TEMIC Semiconductors |
| Description | www.DataSheet4U.com SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) –60 TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View SUB65P06Ć20 D PĆChannel MOSFET rDS... |
| Features |
ge derating. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289. A SPICE Model data sheet is available for this product (FaxBack document #70543). RthJA RthJC 62.5 0.8
Symbol
RthJA
Limit
40
Unit
_C/W
Siliconix P-39628—Rev. A, 28-Dec-94
1
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SUP/SUB65P06-20
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = –250 mA VDS = VGS... |
| Document |
 SUB65P06-20 Data Sheet
PDF 99.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SUB65P06-20 |
Vishay Siliconix |
P-Channel MOSFET |
|
| 2 | SUB65P04-15 |
Vishay Siliconix |
P-Channel MOSFET |
|
| 3 | SUB60N06-08 |
TEMIC |
N-Channel MOSFET |
|
| 4 | SUB60N06-14 |
TEMIC |
N-Channel Transistor |
|
| 5 | SUB60N06-18 |
Vishay Siliconix |
N-Channel MOSFET |
|