SUB50N06-18 - TEMIC

SUB50N06-18 N-Channel MOSFET

TEMIC Siliconix SUP/SUB50N06-18 N-Channel Enhancement-Mode lransistor 175°C Maximum Junction Temperature Product Summary V(BR)DSS (V) 60 rDS(on) (Q) 0.018 ID (A) 48 TO-220AB D o TO-263 DRAIN connected to TAB GDS ThpView SUP50N06·18 G DS ThpView SUB50N06-18 S N·Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Paramete.

Features

C (05/27/94) Advance Information Limit 40 80 1.8 Unit 'c{w 6-155 TEMIC SUP/SUB50N06-18 = Specifications (TJ 25°C Unless Otherwise Noted) Siliconix Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward 1l'ansconductanceb V(BR)DSS VGS(tb) IGSS loss IO(on) toS(on) gr, VGS = Ov, 10 = 250JlA Vos = VGS, los = 1 rnA VOs=OV,VGS- ±20V VOs= 48V,VGS=OV VOS = 48 V, VGS = 0 V, Tl - 125'C Vos - 48 V, VGS = 0 V, Tl - 175'C VOS = 5V,VGS = 10 V.