SUB60N06-18 - Vishay Siliconix

SUB60N06-18 N-Channel MOSFET

www.DataSheet4U.com SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.018 ID (A) 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View SUP60N06-18 G D S S Top View SUB60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source.

Features

1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70290 S
  –57253—Rev. D, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 RthJA hJA RthJC Symbol Limit 40 62.5 1.25 Unit _C/W 2-1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB60N06-18 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 1 mA VDS = 0 V, VGS = "20 V VDS = 60 .