SUB65P04-15 - Vishay Siliconix

SUB65P04-15 P-Channel MOSFET

www.DataSheet4U.com SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) –40 0.023 @ VGS = –4.5 V –50 rDS(on) (W) 0.015 @ VGS = –10 V ID (A) –65 TO-220AB S TO-263 G DRAIN connected to TAB G G D S Top View SUP65P04-15 SUB65P04-15 P-Channel MOSFET D S Top View D ABSOLUTE MAXIMUM RATINGS (TC = 25_C UN.

Features

e PCB (FR-4 material). c. See SOA curve for voltage derating. Document Number: 71174 S-00831—Rev. A, 01-May-00 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC 62.5 1.25 Symbol RthJA Limit 40 Unit _C/W 2-1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB65P04-15 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID =
  –250 mA VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "20 V VDS =
  –40 V, VGS = 0 V Zero Gate Voltage Drain Z G V l .