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SUB60N06-14 |
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| Part Number | SUB60N06-14 |
| Manufacturer | TEMIC |
| Description | TEMIC Siliconix SUP/SUB60N06-14 N-Channel Enhancement-Mode 'fransistor 175°C Maximum Junction Temperature Product Summary V(BR)OSS (V) 60 rOS(on) (Q) 0.014 TO-220AB o 10 (A) 60a TO-263 DRAIN... |
| Features |
Advance Information
Limit 40 80 1.5
Unit 'c/w
6-161
TEMIC
SUP/SUB60N06-14
= Specifications (TJ 25°C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Currentb
Drain-Source On ·State Resistanceb Forward 1i"ansconductanceb V(BR)DSS VGS(th) IGSS Inss In(on) rns(on) grs VGS = ov, In = 2501lA Vns = VGs, Ins = 1 rnA Vns = Ov, VGS = ±20V Vns = 48 V, VGS = OV Vns = 48 V, VGS = 0 V, Tl = 125'C Vns - 48 V, VGS - Ov, Tl- 175'C Vns-5V,VGS- 10V VGS = 10 V, In =30A ... |
| Document |
 SUB60N06-14 Data Sheet
PDF 96.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SUB60N06-18 |
Vishay Siliconix |
N-Channel MOSFET |
|
| 2 | SUB60N06-08 |
TEMIC |
N-Channel MOSFET |
|
| 3 | SUB60P06-20 |
TEMIC |
P-Channel Transistor |
|
| 4 | SUB610 |
AUK |
Schottky Barrier Diode |
|
| 5 | SUB65P04-15 |
Vishay Siliconix |
P-Channel MOSFET |
|