SUB60N06-08 |
Part Number | SUB60N06-08 |
Manufacturer | TEMIC |
Description | TEMIC Siliconix N-Channel Enhancement-Mode 1ransistor 175°C Maximum Junction Temperature SUB60N06-08 Product Summary V(BR)nSS (V) 60 rnS(on) (0) 0.008 In (A) 60a D TO-263 G DS ThpView DRAIN co... |
Features |
arameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = Ov, In = 2S0!1A
60
Gate Threshold Voltage Gate-Body Leakage
VGS(th)
Vns = VGS, In = 2S0!1A
2.0
IGSS
Vns = Ov, VGS = ±20V
Zero Gate Voltage Drain Current
Vns = 48V,VGS = OV
Inss
Vns = 48 ~ VGS = OV,TJ = l2SoC
Vns = 48 V, VGS = Ov, TJ = 175°C
On-State Drain Currentb
In(on)
Vns = SV,VGS = 10V
60
Drain-Source On-State Resistanceb
fDS(on)
VGS = 10 V, In = 30A VGS = 10 V, In = 30 A, TJ = l2SoC
VGS = 10 V, In = 30 A, TJ = 175°C
Forward 'fransconductanceb
gr.
Vns = 15 V, In = 30 A
30
... |
Document |
SUB60N06-08 Data Sheet
PDF 97.34KB |
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