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SUB50N06-18 |
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| Part Number | SUB50N06-18 |
| Manufacturer | TEMIC |
| Description | TEMIC Siliconix SUP/SUB50N06-18 N-Channel Enhancement-Mode lransistor 175°C Maximum Junction Temperature Product Summary V(BR)DSS (V) 60 rDS(on) (Q) 0.018 ID (A) 48 TO-220AB D o TO-263 DRA... |
| Features |
C
(05/27/94)
Advance Information
Limit 40 80 1.8
Unit
'c{w
6-155
TEMIC
SUP/SUB50N06-18
= Specifications (TJ 25°C Unless Otherwise Noted)
Siliconix
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward 1l'ansconductanceb
V(BR)DSS VGS(tb)
IGSS
loss
IO(on)
toS(on) gr,
VGS = Ov, 10 = 250JlA Vos = VGS, los = 1 rnA VOs=OV,VGS- ±20V VOs= 48V,VGS=OV VOS = 48 V, VGS = 0 V, Tl - 125'C Vos - 48 V, VGS = 0 V, Tl - 175'C VOS = 5V,VGS = 10 V... |
| Document |
 SUB50N06-18 Data Sheet
PDF 90.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SUB15P01-52 |
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| 2 | SUB40N06-25L |
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| 3 | SUB45N03-13L |
Vishay Siliconix |
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| 4 | SUB60N06-08 |
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| 5 | SUB60N06-14 |
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