AOSD62666E - Alpha & Omega Semiconductors

AOSD62666E 60V Dual N-Channel MOSFET

• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Gate Drive • ESD Protected • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • Motor Control, Lighting, Industrial and Load switch Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested .

Features

nction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 9.5 7.5 38 14 29 2.5 1.6 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 42 70 Maximum Junction-to-Lead Steady-State RθJL 30 Max 50 85 40 Units °C/W °C/W °C/W Rev.1.0: May 2017 www.aosmd.com Page 1 of 5 AOSD62666E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 IDSS Zero .