AOSD26313C - Alpha & Omega Semiconductors

AOSD26313C 30V Complementary MOSFET

• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge Product Summary P-Channel VDS= -30V ID=-5.7A (VGS=-10V) RDS(ON) < 32mΩ (VGS=-10V) < 55mΩ (VGS=-4.5V) ESD protection 100% UIS Tested 100% Rg Tested N-Channel VDS= 30V ID.

Features

ent C IDM -23 34 IAS 20 15 Avalanche energy L=0.1mH C EAS 20 11 Power Dissipation B TA=25°C TA=70°C 1.7 1.7 PD 1.1 1.1 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ Q1 Max Q1 Typ Q2 Max Q2 52 70 52 70 80 100 80 100 35 45 35 45 Units °C/W °C/W °C/W Rev.1.1: September 2019 www.aosmd.com Page 1 of 9 AOSD26313C P-CH Electrical Characteristics (TJ=2.