AOSD62666E |
Part Number | AOSD62666E |
Manufacturer | Alpha & Omega Semiconductors |
Description | • Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Gate Drive • ESD Protected • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • Motor Contr... |
Features |
nction and Storage Temperature Range
TJ, TSTG
Maximum 60 ±20 9.5 7.5 38 14 29 2.5 1.6
-55 to 150
Units V V
A
A mJ W °C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State
RθJA
42 70
Maximum Junction-to-Lead
Steady-State
RθJL
30
Max 50 85 40
Units °C/W °C/W °C/W
Rev.1.0: May 2017
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AOSD62666E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
IDSS
Zero ... |
Document |
AOSD62666E Data Sheet
PDF 380.10KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AOSD21307 |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET | |
2 | AOSD21311C |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET | |
3 | AOSD21313C |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET | |
4 | AOSD26313C |
Alpha & Omega Semiconductors |
30V Complementary MOSFET | |
5 | AOSD32334C |
Alpha & Omega Semiconductors |
30V Dual N-Channel MOSFET |