AOSP21311C - Alpha & Omega Semiconductors

AOSP21311C 30V P-Channel MOSFET

• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested -30V -6.5A < 42mΩ < 64mΩ HBM Cla.

Features

-4.7 -24 13 8 2.5 1.6 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 42 70 Maximum Junction-to-Lead Steady-State RqJL 20 Max 50 85 30 Units °C/W °C/W °C/W Rev.2.0: July 2020 www.aosmd.com Page 1 of 5 AOSP21311C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS G.