AOSP21321 - Alpha & Omega Semiconductors

AOSP21321 30V P-Channel MOSFET

• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -11A < 17mΩ < 30mΩ Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bot.

Features

Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: November 2017 www.aosmd.com Page 1 of 5 AOSP21321 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) G.