AOSP21357 - Alpha & Omega Semiconductors

AOSP21357 30V P-Channel MOSFET

• Latest advanced trench technology • Low RDS(ON) • High Current capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -16A < 8.5mΩ < 13mΩ Applications • Notebook AC-in load switch • Battery protection charge/discharge 100% UIS Tested 100% Rg Tested SO-8 Top View D D D D Bot.

Features

°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.3.0: February 2020 www.aosmd.com Page 1 of 5 AOSP21357 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V IDSS Zero Gate Voltage Drain Current
• Latest VDS=-30V, VGS=0V advanced Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold.