AOSD32334C - Alpha & Omega Semiconductors

AOSD32334C 30V Dual N-Channel MOSFET

• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • Ideal for Load Switch Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ESD protection 100% UIS Tested 100% Rg Tested 30V 7A < 20mΩ < 26mΩ Top View SOIC-8 Bottom View Top View D D S2 1 8 D2 G2 2 7 D2 S1 3 .

Features

stics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 52 80 Maximum Junction-to-Lead Steady-State RqJL 35 Max 70 100 45 Units °C/W °C/W °C/W Rev.1.1: August 2023 www.aosmd.com Page 1 of 5 AOSD32334C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 μA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±10 μA .