AOSD21313C - Alpha & Omega Semiconductors

AOSD21313C 30V Dual P-Channel MOSFET

• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) ESD protection 100% UIS Tested 100% Rg Tested -30V -5.7A < 32mΩ < 55mΩ Top View SO-8.

Features

3 20 20 1.7 1.1 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 52 80 Maximum Junction-to-Lead Steady-State RqJL 35 Max 70 100 45 Units °C/W °C/W °C/W Rev.1.1: September 2019 www.aosmd.com Page 1 of 5 AOSD21313C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current
• Latest VDS=-30V, VGS=0V TJ=55°C.