• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) ESD protection 100% UIS Tested 100% Rg Tested -30V -7A < 32mΩ < 55mΩ SO-8 Top View D.
V V
A
A mJ W °C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State
RqJA
42 70
Maximum Junction-to-Lead
Steady-State
RqJL
20
Max 50 85 30
Units °C/W °C/W °C/W
Rev.1.1: September 2019
www.aosmd.com
Page 1 of 5
AOSP21313C
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250mA, VGS=0V
-30
IDSS
Zero Gate Voltage Drain Current
• Latest
VDS=-30V, VGS=0V
TJ=55°C
advanced Gate-Body leakage curre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOSP21311C |
Alpha & Omega Semiconductors |
30V P-Channel MOSFET | |
2 | AOSP21307 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
3 | AOSP21321 |
Alpha & Omega Semiconductors |
30V P-Channel MOSFET | |
4 | AOSP21357 |
Alpha & Omega Semiconductors |
30V P-Channel MOSFET | |
5 | AOSP32314 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
6 | AOSP32320C |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
7 | AOSP32368 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
8 | AOSP66406 |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET | |
9 | AOSP66925 |
Alpha & Omega Semiconductors |
100V N-Channel MOSFET | |
10 | AOS3729A-T42-NXC |
SANICO |
Analog MEMS Microphone | |
11 | AOSD21307 |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET | |
12 | AOSD21311C |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET |