AOSD21307 - Alpha & Omega Semiconductors

AOSD21307 30V Dual P-Channel MOSFET

• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -9A < 16mΩ < 28mΩ Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View .

Features

2.0 1.2 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 50 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 Units °C/W °C/W °C/W Rev.1.1: July 2023 www.aosmd.com Page 1 of 5 AOSD21307 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current
• Latest VDS=-30V, VGS=0V TJ=55°C advanced G.